DEMO-ALM-2X12 Datasheet, PDF (2/10 Pages) Broadcom Corporation. – Dual-Band (2.4-2.5) GHz & (4.9-6) GHz WLAN Low-Noise Amplifier

Absolute Maximum Ratings [1]
Parameter
Drain – Source Voltage^[2]
2G Drain Current ^[2]
5G Drain Current ^[2]
Total Power Dissipation ^[3]
RF Input Power
Channel Temperature
Storage Temperature
Thermal Resistance ^[4]
Symbol
V_DS
I_{DS_2G}
I_{DS_5G}
Pdiss
Pin max.
T_CH
T_STG
Tch_b
Units
V
mA
mA
W
dBm
*C
*C
*C/W
Absolute Maximum
3.6
30
45
0.2
5
150
-65 to 150
29.9
Notes:
1. Operation of this device above any one of these
parameters may cause permanent damage.
2. Assuming DC quiescent conditions.
3. Board (package belly) temperature TB is 25*C.
Derate 33.4mW/*C for TB > 144 *C.
4. Channel-to-board thermal resistance measured
using 150*C Liquid Crystal Measurement
method.
Product Consistency Distribution Charts ^[5,6]
10000
8000
Stdev = 0.3
6000
4000
- 3 Std
+3 Std
2000
0
15 16 17 18 19
Figure 1. Gain @ 2.45GHz; LSL = 15dB, Nominal = 16.7dB, USL = 18.5dB
8000
6000
Stdev = 0.9
4000
+3 Std
2000
0
0 0.3 0.6 0.9 1.2 1.5
Figure 2. NF @ 2.45GHz; Nominal = 0.8dB, USL = 1.5dB
6000
5000
Stdev = 0.9
4000
3000
-3 Std
+3 Std
2000
1000
0
10 12 14 16 18 20 22
Figure 3. Ids @ 2.45GHz; LSL = 11mA, Nominal = 15mA, USL = 21mA
8000
6000
Stdev = 0.1
4000
+3 Std
8000
6000
Stdev = 0.5
4000
-3 Std
+3 Std
2000
0
20 21 22 23 24 25 26
Figure 4. Gain @ 5.5GHz; LSL = 21dB, Nominal = 23.2dB, USL = 25dB
8000
6000
4000
-3 Std
Stdev = 1.5
-3 Std
2000
2000
0
0.8 1.1 1.4 1.7 2 2.3
Figure 5. NF @ 5.5GHz; Nominal = 1.4dB, USL = 1.9dB
0
16 20 24 28 32
Figure 6. Ids @ 5.5GHz; LSL = 19mA, Nominal = 23.4mA, USL = 31mA
Note:
5. Distribution data sample size is 18K samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
6. Measurements are made on production test board, which represents a trade-off between optimal Gain, NF, IIP3, IP1dB and VSWR. Circuit losses
have been de-embedded from actual measurements.
2