DEMO-ALM-11X36 Datasheet, PDF (2/12 Pages) Broadcom Corporation. – Low Noise, High Linearity Amplifier Module with Fail-Safe Bypass Feature

Absolute Maximum Rating ^[1] T_A = 25° C
Symbol
V_dd
P_in,max
P_diss
T_j
T_STG
Parameter
Device Voltage,
RF output to ground
CW RF Input Power
(V_dd = 5.0 V, I_dd = 100 mA)
Total Power Dissipation ^[3]
Junction Temperature
Storage Temperature
Units Absolute Max.
V
5.5
dBm
+15
W
0.715
°C
150
°C
-65 to 150
Thermal Resistance ^[2]
(V_dd = 5.0 V, I_dd = 100 mA) θ_jc = 83.1 °C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using Infra-Red
measurement technique.
3. Power dissipation with unit turned on. Board
temperature T_c is 25° C. Derate at 12.3 mW/°C
for T_C > 92° C.
Electrical Specifications ^{[1, 4]}
RF performance at T_A = 25° C, V_dd = 5 V, 849 MHz, measured on demo board in Figure 1 with component listed in Table 1
for DC bypass.
Symbol
Parameter and Test Condition
Frequency (MHz) Units Min.
Typ.
Max.
I_dd
Drain Current
mA
75
92
107
Gain
Gain
776
dB
–
15.4
–
849
14.2
15.6
17.2
IRL
Input Return Loss, 50 Ω source
dB
–
30
–
ORL
Output Return Loss, 50 Ω load
dB
–
26
–
NF ^[2]
Noise Figure
776
dB
–
0.84
–
849
–
0.78
0.95
IIP3 ^[3]
Input Third Order Intercept Point
dBm
18.7
21.3
–
IP1dB
Input Power at 1 dB Gain Compression
dBm
2.85
4
–
Bypass IL
Bypass Insertion Loss, 50 Ω load Vdd = 0 V
776
849
dB
–
–
0.7
–
0.82
1.1
Bypass IRL
Input Return Loss, 50 Ω source Vdd = 0 V
dB
–
35
–
Bypass ORL Output Return Loss, 50 Ω load Vdd = 0 V
dB
–
35
–
ISOL
Bypass Isolation @LNA ON Vdd = 5 V
dB
–
54
–
Notes:
1. Measurements at 849 MHz obtained using demo board described in Figure 1.
2. For NF data, board losses of the input have not been de-embedded.
3. IIP3 test condition: F_RF1 = 849 MHz, F_RF2 = 850 MHz with input power of -15 dBm per tone.
4. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
2