VMMK-1218 Datasheet, PDF (1/12 Pages) AVAGO TECHNOLOGIES LIMITED – 0.5 to 18 GHz Low Noise E-PHEMT in a Wafer Scale Package

VMMK-1218
0.5 to 18 GHz Low Noise E-PHEMT
in a Wafer Scale Package
Data Sheet
Description
Avago Technologies has combined it’s industry leading
E-pHEMT technology with a revolutionary chip scale
package. The VMMK-1218 can produce an LNA with
high dynamic range, high gain and low noise figure that
generates off of a single position DC power supply. The
GaAsCap wafer scale sub-miniature leadless package is
small and ultra thin, yet can be handled and placed with
standard 0402 pick and place assembly.
The use of 0.25 micron gates allow a ultra low noise figure
(below 1dB from 500 MHz to 12 GHz) with respectable as-
sociated gain. With a flat transconductance over bias and
frequency the VMMK-1218 provides excellent linearity
of over 30 dBm and power over 15 dBm at one dB com-
pression. This product is easy to use since it requires only
positive DC voltages for bias and low matching coeffi-
cients for simple impedance matching to 50 Ω systems.
The VMMK-1218 is intended for any 500MHz to 18GHz
application including 802.11abgn WLAN, WiMax, BWA
802.16 & 802.20 and military applications.
WLP 0402, 1mm x 0.5mm x 0.25 mm

t
^BYY
Gate

t
BYY
Drain
Pin Connections (Top View)
Notes: Top view package marking provides orientation
Features
x Sub-miniature 0402 (1mm x 0.5mm) Surface Mount
Leadless Package
x Low height (0.25mm)
x Frequency Range 0.5 to 18 GHz
x Enhancement Mode ^[1]
x 0.25 micron gate width
x Tape and Reel packaging option available
x Point MTTF > 300 years at 120^oC channel temperature
Specifications
x 0.7 dB Fmin
x 9.0 dB Ga
x +22 dBm output 3^rd order intercept
x +12 dBm output power
Applications
x Low Noise and Driver for Cellular/PCS and WCDMA
Base Stations
x 2.4 GHz, 3.5GHz, 5-6GHz WLAN and WiMax notebook
computer, access point and mobile wireless
applications
x DBS 10 to 13 GHz receivers
x VSAT and SATCOM 13 to 18 GHz systems
x 802.16 & 802.20 BWA systems
x WLL and MMDS Transceivers
x General purpose discrete E-pHEMT for other ultra low
noise applications
Notes:
1. The Avago enhancement mode pHEMT devices do not require a
negative gate bias voltage as they are “normally off”. They can help
simplify the design and reduce the cost of receivers and transmitters
in many applications from 500 MHz to 18 GHz
gate
source
Notes:
“b” = Device Code
“YY” = Year Code
drain
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 20 V (class A)
ESD Human Body Model = 100 V (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.