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MGA-684P8 Datasheet, PDF (1/10 Pages) AVAGO TECHNOLOGIES LIMITED – Low Noise Active Bias Low Noise Amplifi er | |||
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MGA-684P8
Low Noise Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologiesâ MGA-684P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). The LNA
has low noise and high linearity achieved through the
use of Avago Technologiesâ proprietary 0.25 ïm GaAs
Enhancement-mode pHEMT process. It is housed in a
miniature 2.0 x 2.0 x 0.75 mm3 8-pin Quad-Flat-Non-Lead
(QFN) package. It is designed for optimum use from 1.5
GHz up to 4 GHz. The compact footprint and low profile
coupled with low noise, high gain and high linearity make
the MGA-684P8 an ideal choice as a low noise amplifier for
cellular infrastructure for GSM and CDMA. For optimum
performance at lower frequency from 450 MHz up to 1.5
GHz, MGA-683P8 is recommended. Both MGA-683P8 and
MGA-684P8 share the same package and pinout configu-
ration.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm3 8-lead QFN
[1]
[8]
[8]
[1]
[2] 84X [7]
[3]
[6]
[7]
[6]
[2]
[3]
[4]
[5]
[5]
[4]
Top View
Pin 1 â Vbias
Pin 2 â RFinput
Pin 3 â Not Used
Pin 4 â Not Used
Bottom View
Pin 5 â Not Used
Pin 6 â Not Used
Pin 7 â RFoutput/Vdd
Pin 8 â Not Used
Centre tab - Ground
Note:
Package marking provides orientation and identification
â84â = Device Code, where X is the month code.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V (Class A)
ESD Human Body Model = 500 V (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Features
ï·ï Low noise Figure
ï·ï High linearity performance
ï·ï GaAs E-pHEMT Technology[1]
ï·ï Low cost small package size: 2.0 x 2.0 x 0.75 mm3
ï·ï Excellent uniformity in product specifications
ï·ï Tape-and-Reel packaging option available
Specifications
1.9 GHz; 5 V, 35 mA
ï·ï 17.6 dB Gain
ï·ï 0.56 dB Noise Figure
ï·ï 21 dB Input Return Loss
ï·ï 32.4 dBm Output IP3
ï·ï 22 dBm Output Power at 1dB gain compression
Applications
ï·ï Low noise amplifier for cellular infrastructure for GSM
TDS-CDMA, and CDMA.
ï·ï Other low noise application.
ï·ï Repeater, Metrocell/Picocell application.
Simplified Schematic
Vdd
C5
Rbias
C6
C3
R1
R2
C4
L1
RFin
C1
[1]
[2]
[3]
L3
[4]
L2
[8] C2 RFout
[7]
[6]
[5]
Note:
ï· The schematic is shown with the assumption that similar PCB is used
for both MGA-683P8 and MGA-684P8.
ï· Detail of the components needed for this product is shown in Table 1.
ï· Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
ï· Good RF practice requires all unused pins to be earthed.
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