MGA-636P8 Datasheet, PDF (1/14 Pages) AVAGO TECHNOLOGIES LIMITED – High Linearity Low Noise Amplifier

MGA-636P8
High Linearity Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-636P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA). This LNA
has low noise and high linearity achieved through the
use of Avago Technologies’ proprietary 0.25 mm GaAs
Enhancement-mode pHEMT process. It is housed in the
miniature 2.0 x 2.0 x 0.75 mm³ 8-pin Dual-Flat-Non-Lead
(DFN) package. The device is designed for optimum use
from 450 MHz up to 1.5 GHz. The compact footprint
and low profile coupled with low noise, high gain and
high linearity make this an ideal choice as a low noise
amplifier for cellular infrastructure applications such as
LTE, GSM, CDMA, W-CDMA, CDMA2000 & TD-SCDMA. For
optimum performance at lower frequency from 1.5 GHz
up to 2.5 GHz, MGA-637P8 is recommended. For optimum
performance at higher frequency from 2.5 GHz up to 4
GHz, MGA-638P8 is recommended. All these 3 products,
MGA-636P8, MGA-637P8 and MGA-638P8 share the same
package and pinout configuration.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm³ 8-lead DFN
[1]
[8]
[2] _36X ^[7]
[3]
[6]
[4]
[5]
[8]
[1]
[7]
[2]
[6]
GND
[3]
[5]
[4]
TOP VIEW
Pin 1 – Not Used
Pin 2 – RFinput
Pin 3 – Vbias2
Pin 4 – Not Used
Center paddle – GND
BOTTOM VIEW
Pin 5 – Vbias1
Pin 6 – PwrDwn
Pin 7 – RFoutput
Pin 8 – Not Used
Note:
Package marking provides orientation and identification
“36” = Product Code
“X” = Month Code
It is recommended to ground Pin1, 4 and 8 which are Not Used.
Features
• High linearity performance.
• Low Noise Figure.
• GaAs E-pHEMT Technology^[1].
• Low cost small package size.
• Integrated with active bias and option to access FET
gate.
• Integrated power down control pin.
Specifications
700 MHz; 4.8 V, 108 mA
• 18.8 dB Gain
• 0.44 dB Noise Figure
• 11 dB Input Return Loss
• +23.7 dBm Input IP3
• +23.8 dBm Output Power at 1 dB gain compression
Applications
• Cellular infrastructure applications such as LTE, GSM,
CDMA, W-CDMA, CDMA2000 & TD-SCDMA.
• Other low noise applications.
Note:
1. Enhancement mode technology employs positive Vgs, thereby
eliminating the need of negative gate voltage associated with con-
ventional depletion mode devices.
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 70 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.