MGA-632P8 Datasheet, PDF (1/18 Pages) AVAGO TECHNOLOGIES LIMITED – Low Noise, High Linearity Active Bias Low Noise Amplifier

MGA-632P8
Low Noise, High Linearity Active Bias Low Noise Amplifier
Data Sheet
Description
Avago Technologies’ MGA-632P8 is an economical, easy-
to-use GaAs MMIC Low Noise Amplifier (LNA) with active
bias. The LNA has low noise with excellent input return
loss and high linearity achieved through the use of
Avago Technologies’ proprietary 0.5um GaAs Enhance-
ment-mode pHEMT process. The LNA has an extra feature
that allows a designer to adjust supply current and gain
externally. Due to the high isolation between the input
and output, gain can be adjusted independently through
a resistor in series with a blocking capacitor from the
output pin to FB1 pin, without affecting the noise figure.
It is housed in a miniature 2.0 x 2.0 x 0.75mm³ 8-pin Thin
Small Leadless Package (TSLP) package. The compact
footprint and low profile coupled with low noise, high
gain, excellent input return loss and high linearity make
the MGA-632P8 an ideal choice as an LNA for cellular in-
frastructure for GSM, CDMA, W-CDMA and TD-SCDMA ap-
plications.
It is designed for optimum use between 1.4GHz to
3.8GHz. For optimum performance at lower frequency
from 400MHz to 1.5GHz, the MGA-631P8 is recommend-
ed. Both MGA-631P8 and MGA-632P8 share the same
package and pinout.
Pin Configuration and Package Marking
2.0 x 2.0 x 0.75 mm³ 8-lead TSLP
Features
• Low noise figure
• Good input return loss
• High linearity performance
• High Isolation
• Externally adjustable supply current, 40-80mA
• Externally adjustable gain, 15-20dB
• GaAs E-pHEMT Technology^[1]
• Low cost small package size: 2.0x2.0x0.75 mm³
• Excellent uniformity in product specifications
Specifications
1.95GHz; 4V, 57mA (typ)
• 17.6 dB Gain
• 0.62 dB Noise Figure
• -22.7 dB S11
• -40.5 dB S12
• 33.9 dBm Output IP3
• 19.2 dBm Output Power at 1dB gain compression
Applications
• Low noise amplifier for cellular infrastructure for GSM,
CDMA, W-CDMA and TD-SCDMA.
• Other ultra low noise applications.
Note:
1. Enhancement mode technology employs positive Vbias, thereby
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
Top View
Note:
Package marking provides
orientation and identification
“G2” is Device Code
“X” is month code
Bottom View
Note:
Pin 1 : not used
Pin 2 : RFin
Pin 3 : RF ground
Pin 4 : Vbias
Pin 5 : FB1
Pin 6 : not used
Pin 7 : RFout
Pin 8 : Gnd
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 50 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.