DEMO-MGA-30X16 Datasheet, PDF (1/17 Pages) Broadcom Corporation. – ½ Watt High Linearity Amplifi er

MGA-30116
150MHz – 1GHz
½ Watt High Linearity Amplifier
Data Sheet
Description
Avago Technologies’ MGA-30116 is a high linearity ½ Watt
PA with good OIP3 performance and exceptionally good
PAE at p1dB gain compression point, achieved through
the use of Avago Technologies’ proprietary 0.25um GaAs
Enhancement-mode pHEMT process.
The adjustable temperature compensated internal bias
circuit allowed the device to be operated at either class A
or class AB operation
The MGA-30116 is housed inside a standard 16 pin QFN
3X3 package.
Applications
 Class A driver amplifier for GSM/CDMA Base Stations.
 General purpose gain block.
Component Image
16 pins QFN 3x3
30116
YYWW
XXXX
NC 12
VDD/RFout 11
GND
VDD/RFout 10
NC 9
1 Vm
2 Vbias
3 RF in
4 NC
Features
 High linearity and P1dB
 Built in adjustable temperature compensated internal
bias circuitry
 GaAs E-pHEMT Technology ^[1]
 Standard QFN 3X3 package
 5V supply
 Excellent uniformity in product specifications
 Tape-and-Reel packaging option available
 MSL-1 and Lead-free
 High MTTF for base station application
Specifications
900MHz; 5V, 202.8mA (typical)
 17.0 dB Gain
 44.1 dBm Output IP3
 27.7 dBm Output Power at 1dB gain compression
 47.0% PAE at P1dB
 2.0 dB Noise Figure
Notes:
1. Enhancement mode technology employs positive gate voltage,
thereby eliminating the need of negative gate voltage associated
with conventional depletion mode devices.
nc = not connected
TOP VIEW
BOTTOM VIEW
Notes:
Package marking provides orientation and identification
“30116” = Device Part Number
“YYWW” = Work Week and Year of manufacture
“XXXX” = Last 4 digit of Lot number
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 300 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.