ATF-53189 Datasheet, PDF (1/17 Pages) Agilent(Hewlett-Packard) – Enhancement Mode Pseudomorphic HEMT in SOT 89 Package

ATF-53189 ­
Enhancement Mode^[1] Pseudomorphic HEMT
in SOT 89 ­Package
Data Sheet
Description
Avago Technologies’s ATF‑53189 is a single-voltage high
linearity, low noise E‑pHEMT FET packaged in a low cost
surface mount SOT89 package. The device is ideal as a
high-linearity, low noise, m­ edium-power amplifier. Its
operating frequency range is from 50 MHz to 6 GHz.
ATF-53189 is ideally suited for Cellular/PCS and WCDMA
wireless infrastructure, WLAN, WLL and MMDS application,
and general-purpose discrete E‑pHEMT amplifiers that
require medium power and high linearity. All devices are
100% RF and DC tested.
Pin Connections and Package Marking
3GX
#1 #2 #3
RFin GND RFout
Top View
#3 #2
#1
RFout GND RFin
Bottom View
Notes:
Package marking provides orientation and identification:
“3G” = Device Code
“x” = Month code indicates the month of manufacture.
D = Drain
S = Source
G = Gate
Features
• Single voltage operation
• High Linearity and Gain
• Low Noise Figure
• Excellent uniformity in product specifications
• SOT 89 standard package
• Point MTTF > 300 years^[2]
• MSL-2 and lead-free
• Tape-and-Reel packaging option available
Specifications
2 GHz, 4.0V, 135 mA (Typ.)
• 40.0 dBm Output IP3
• 23.0 dBm Output Power at 1dB gain compression
• 0.85 dB Noise Figure
• 15.5 dB Gain
• 46% PAE at P1dB
• LFOM^[3] 12.7 dB
Applications
• Front-end LNA Q1 and Q2, Driver or Pre-driver Ampli-
fier for Cellular/PCS and WCDMA wireless infrastruc-
ture
• Driver Amplifier for WLAN, WLL/RLL and MMDS ap-
plications
• General purpose discrete E-pHEMT for other high
linearity applications
Notes:
1. Enhancement mode technology employs a single positive V_gs,
eliminating the need of negative gate voltage associated with
conventional depletion mode devices.
2. Refer to reliability datasheet for detailed MTTF data.
3. Linearity Figure of Merit (LFOM) is OIP3 divided by DC bias power.