ACPL-P349 Datasheet, PDF (1/18 Pages) Broadcom Corporation. – 2.5-Amp Output Current SiC/GaN MOSFET and IGBT Gate Drive Optocoupler in Stretched SO6

ACPL-P349 and ACPL-W349
2.5-Amp Output Current SiC/GaN MOSFET and
IGBT Gate Drive Optocoupler in Stretched SO6
Data Sheet
Description
The ACPL-P349/W349 contains an AlGaAs LED, which is
optically coupled to an integrated circuit with a power output
stage. This optocoupler is ideally suited for driving SiC/GaN
(Silicon Carbide / Gallium Nitride) MOSFETs and IGBTs used in
power conversion applications. The high operating voltage
range of the output stage provides the drive voltages required
by gate controlled devices. The voltage and high peak output
current supplied by this optocoupler make it ideally suited for
direct driving SiC/GaN MOSFET and IGBT with ratings up to
1200V/100A.
Functional Diagram
ANODE 1
NC 2
CATHODE 3
6 V_CC
5 VOUT
4 ^VEE
NOTE Design Note: A 1-μF bypass capacitor must be
connected between pins V_CC and V_EE.
Features
 2.5-A maximum peak output current
 Wide operating VCC range: 15V to 30 V
 110-ns maximum propagation delay
 50-ns maximum propagation delay difference
 Rail-to-rail output voltage
 50 kV/μs minimum Common Mode Rejection (CMR) at
V_CM = 1500V
 LED current input with hysteresis
 I_CC = 4.2 mA maximum supply current
 Under Voltage Lock-Out protection (UVLO) with hysteresis
 Industrial temperature range: –40°C to 105°C
 Safety Approval
— UL Recognized 3750/5000 V_RMS for 1min.
— CSA
— IEC/EN/DIN EN 60747-5-5 V_IORM = 891/1140 V_PEAK
Applications
 SiC/GaN MOSFET and IGBT gate drive
 Motor drives
 Industrial Inverters
 Renewable energy inverters
 Switching power supplies
CAUTION
It is advised that normal static precautions be
taken in handling and assembly of this
component to prevent damage and/or
degradation which may be induced by ESD. The
components featured in this datasheet are not to
be used in military or aerospace applications or
environments.
Broadcom
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