7721-1A Datasheet, PDF (3/5 Pages) Bi technologies – Power Module

ELECTRICAL CHARACTERISTICS (7721-2A)
Parameter
Symbol Conditions¹
Min. Typ. Max. Units
Q1-Q4 IGBT
Continuous Collector Current I_C
Pulsed Collector Current
I_CM
Collector Leakage Current
I_CES
Saturation Voltage
Gate Threshold Voltage
Gate Leakage Current
Total Gate Charge (turn on)
Gate Emitter Charge (turn on)
Gate Collector Charge (turn on)
Turn Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Junction Temperature
Thermal Resistance
D1-D4 Fred Diodes
V_CE(ON)
V_GE(TH)
I_GES
Qg
Qge
Qgc
td(off)
tf
Ets
Cies
Coes
Cres
T_J
R_thjc
T_C = 25°C
T_C = 90°C
V_GE = 0V, = .8x600V
V_GE = 0V, V_CE = .8x600V,T_J = 125°C
I_C = 32A, V_GE = 15V
V_CE = V_GE, I_C = 250µA
V_GE = ±20V
I_C = 32A, V_CC = 300V,V_GE = 15V
I_C = 32A, V_CC = 300V,V_GE = 15V
I_C = 32A, V_CC = 300V,V_GE = 15V
I_C = 32A, V_CC = 400V,V_GE = 15V,R_G = 4.7Ω
I_C = 32A, V_CC = 400V,V_GE = 15V,R_G = 4.7Ω
I_C = 32A, V_CC = 400V,V_GE = 15V,R_G = 4.7Ω
V_GE = 0V, V_CC = 25V, f = 1MHz
V_GE = 0V, V_CC = 25V, f = 1MHz
V_GE = 0V, V_CC = 25V, f = 1MHz
60 A
32 A
120 A
200 µA
1 mA
2.5 V
2.5
5.0 V
±100 nA
125 150 nC
23 35 nC
50 75 nC
100 200 ns
80 150 ns
.8 1.6 mJ
2500
pF
230
pF
70
pF
150 °C
.60 °C/W
Reverse Leakage Current
Forward Voltage
Reverse Recovery Time
Junction Temperature
Thermal Resistance
TH1 NTC Thermistor
I_R
V_R = 600V
V_R = .600V, T_J =150°C
V_F
I_F = 25A
I_F = 25A, T_J =150°C
trr
I_F = 1A, -di/dt = 100A/µs
T_j
R_thjc
1 500 µA
.3 1.5 mA
1.5 2.8 V
1.3 2.5 V
30 40 ns
175 °C
1.2 °C/W
Resistance
Resistance Ratio
R₂₅
R_T/R₂₅
I =1mA
t = 80°C
t = 90°C
t = 100°C
22.5 25 27.5 KΩ
.126
.0916
.0679
7
t = 110°C
.0511
Dissipation Constant
P_D
Thermal Time Constant
t
1.0
mW/°C
10 sec
1 - TCase = 25°C unless otherwise specified.
7-33
Model 7721 Series