7700 Datasheet, PDF (2/8 Pages) Bi technologies – Power Factor Correction Power Module

ELECTRICAL CHARACTERISTICS
Parameter
Symbol Conditions¹
Model Min. Typ. Max. Units
MOS FET
Continuous Drain Current
I_D
T_C = 25°C
B
-2A
56
A
80
A
T_C = 100°C
B
34.8
A
-2A
48
A
Pulsed Drain Current
I_DM
B
224
A
-2A
320
A
Single Pulse Avalanche Energy E_AS
B
760 mJ
-2A
960 mJ
Repetitive Avalanche Energy E_AR
B
19 mJ
-2A
28 mJ
Avalanche Current
I_AR
B
8.7
A
-2A
20
A
Gate to Source Voltage
Leakage Current
Drain to Source ON Voltage
V_GS
I_DSS
V_DS(ON)
V_GS = 0V, V_DS = 500V
I_C = 28A, V_GS = 10V
B, -2A
B, -2A
B 1.5
-2A 1.0
±30
V
100 µA
2.8
V
2.7
V
Gate Threshold Voltage
Gate Leakage Current
Total Gate Charge
Gate Source Charge
Gate Drain (Miller) Charge
V_GS(TH)
I_GSS
Qg
Qgs
Qgd
V_DS = V_GS, I_D = 1mA
V_GS ±20V
I_D = 56A, V_DS = 400V
V_GS = 10V
B, -2A 2.0
B, -2A
B
B
B
4.0
V
±400 nA
600 nC
80 nC
320 nC
Total Gate Charge
Qg
I_D = 80A, V_DS = 400V
-2A
Gate Source Charge
Qgs
V_GS = 10V
-2A
Gate Drain (Miller) Charge Qgd
-2A
480 nC
128 nC
196 nC
Continous Source Current I_S
(Body Diode)
B
56
A
-2A
80
A
Pulsed Source Current
I_SM
(Body Diode)
B
224
A
-2A
320
A
Body Diode Forward Voltage V_SD
Reverse Recovery Time
trr
(Body Diode)
Reverse Recovery Charge Qrr
(Body Diode)
Internal Gate Resistor
R_G
I_S = 56A, V_GS = 0V
I_S = 80A, V_GS = 0V
I_F = 56A, di/dt = 400Aµs
I_F = 80A, di/dt = 400Aµs
I_F = 56A, di/dt = 400Aµs
I_F = 80A, di/dt = 400Aµs
B 0.4
-2A 0.5
B
-2A
B
-2A
1.4
V
1.8
V
810
ns
860
ns
28.8
ns
39.6
ns
B
1.25
Ω
Junction Temperature
Thermal Resistance
T_J
R_THJC
-2A
B, -2A
B
0.25
Ω
150
°C
0.20 .025 °C/W
-2A
.15 .20 °C/W
7-20
Model 7700 Series