664_12 Datasheet, PDF (1/3 Pages) Bi technologies – Isolated and bussed circuits

Nichrome Resistor Networks
on Ceramic Substrates
Models 664, 667, 668
• Isolated and bussed circuits
• Thin film resistor network
•_0_.1_50_” S_ï€O_IC_p_ac_ka_g_es_{}
• RoHS compliant




F^ eatures

P_Prr_ee_cc_isi_is_oi_non_NiN_chic_roh_mro_em_Ree_siR_ste_ors_sis_ot_nor_Cs_ero_an_mC_ic eramic
Industry Standard Packaging
Industry Standard Packaging
Ratio Tolerances
RTCaRtioTraTcokliengraTnocleersances
TCR Tracking Tolerances
Schematics

Passivation coating provides protection in humid environments
Passivation coating provides protection_Exi_cn_elh_leu_nm_{t f}i_rd_eqe_un_ev_ni_cr_yon_rem_spe_on_nt_ss_e
Exc^Eel^xle^cn^et^lllo^enⁿg^{t f}t^re^erm^qur^eesⁿis^ct^yan^rc^ee^ss^pt^oabⁿi^slit^ey
Excellent long term resistance stability
JEDEC 95, MS-012
(SOIC narrow body in 8, 14 a_Jn_Ed_D1_E6_Clea₉d₅p_, i_Mn _Sco_-u₀n₁t₂s)
(SOIC narrow body in 8, 14 and 16 lead pin_{< ±}co₀u_.0n₅ts_%)
<<± ±5 0pp.0m5/%°C
< ± 5 ppm/°C


E^l^ï€e^c^t^r^ic^a^l^{1}
S_Stt_aa_nn_dd_aa_rdrd_ReR_se_ists_ais_ncta_en_Rc_ae_ngR_ea2 nge²
TTCCRR
T^TCC^RR^TrT^ar^ca^kcⁱⁿk^ging
O^Op^pee^rr^aa^titⁿin^gg^TeT^me^pm^erp^ae^tura^retu^Rr^ae^ngR^eange
Interlead Capacitance
Interlead Capacitance
Insulation Resistance
I_Mns_au_xil_mat_uio_mn_OR_pe_ers_ai_ts_inta_gn_Vc_oe_ltage
MNoaixseim, MumaximOupmer(aMtiInL-gSTVDo-2lt0a2g,eMethod 308)
N^Reo^siⁱs^ste^o,^rM^Poa^wx^eim^{r R}u^am^tin(^gM^aI^tL⁷-S^0°T^CD-202, Method 308)
1RSepsecisiftiocartPioonswseurbRjecattitnogchaatn7g0e°wCithout notice.
2 E96 codes available.
General Note
TT electronics reserves the right to make changes in product specification without notice or liability.
All information is subject to TT electronics’ own data and is considered accurate at time of going to print.
1 _{Specifications subject to change without notice.}
©2 T_ET₉e₆le_cc_otr_do_en_sic_as_vap_il_lc_able.
BI Technologies Corporation

1K ohms ₁to_{K o}1_h0_m0_sK_to o₁₀h₀m_K s_oh(_mIs_so_(Il_sa_ot_lae_ted_d)₎
1K ohms₁t_Ko_o2_hm0_sK_too₂h₀m_{K o}s_h(_mB_su_(Bs_us_se_sed_d)₎
± 25± 2p5ppmpm/°/°CC
± 5^±p⁵p^pm^pm/°^/°C^C
-55°C^-55t^°o^C+^to1⁺2¹5²⁵°^°C^C
< 2pF
< 2pF
≥ 10,000 Megohms
 10,₁0₀0₀0_VM_dce_og_roh_√m_Ps_R
100 Vdc or-40PdRB
0._-1₄W₀ a_dt_Bts
0.1 Watts
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01.12