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| MMDT4413 Datasheet, PDF (3/5 Pages) Transys Electronics – COMPLEMENTARY NPN/PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Production specification
Small Surface Mount Transistor
MMDT4413
ELECTRICAL CHARACTERISTICS PNP 4403 Section @ Ta=25â unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage
IC=-100μA,IE=0
-40
V
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA,IB=0
-40
V
V(BR)EBO Emitter-base breakdown voltage
IE=-100μA,IC=0
-5
V
ICBO
collector cut-off current
IE = 0,VCB = -30V
-
-0.1 μA
ICEO
collector cut-off current
IE = 0,VCE = -30V
-
-0.1 μA
IEBO
emitter cut-off current
IC = 0, VEB = -5V
-
-0.1 μA
hFE
DC current gain
VCE =-1V,IC= -0.1mA
VCE =-1V,IC =-1mA
VCE =-1V,IC =-10mA
VCE =-1V,IC =-150mA
30
-
60
-
100
-
100 300
VCE(sat)
VBE(sat)
Cob
fT
td
tr
ts
tf
collector-emitter saturation voltage
base-emitter saturation voltage
Output capacitance
transition frequency
delay time
rise time
storage time
fall time
IC =-150mA,IB =-15mA
-
-0.4 V
IC =-500mA,IB =-50mA
- -0.75 V
IC =-150mA,IB =-15mA
IC =-500mA, IB =-50mA
-0.75 -0.95 V
-
-1.3 V
IE=0, VCB=-10V; f =1MHz
-
8.5 pF
IC=-20mA,VCE=-10V,f=100MHz 200
- MHz
VCC=-30V,VBE=-2V,IC=-150mA
-
IB1=-15mA
-
15 ns
20 ns
VCC=-30V,IC=-150mA
IB1=IB2=-15mA
-
225 ns
-
30 ns
G028
Rev.A
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