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| MMDT3946_13 Datasheet, PDF (3/5 Pages) Galaxy Semi-Conductor Holdings Limited – Small Surface Mount Transistor | |||
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Production specification
Small Surface Mount Transistor
MMDT3946
ELECTRICAL CHARACTERISTICS PNP 3906 Section @ Ta=25â unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage IC=-10μA,IE=0
-40
V
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA,IB=0
-40
V
V(BR)EBO Emitter-base breakdown voltage
IE=-10μA,IC=0
-5
V
ICEX
collector cut-off current
VCE=-30V,VEB(OFF)=-3.0V
- -0.05 μA
IBL
hFE
VCE(sat)
VBE(sat)
Base cut-off current
DC current gain
collector-emitter saturation voltage
VCE=-30V,VEB(OFF)=-3.0V
VCE =-1V,IC= -0.1mA
VCE =-1V,IC =-1mA
VCE =-1V,IC =-10mA
VCE =-1V,IC =-50mA
VCE =-1V,IC =-100mA
IC =-10mA,IB =-1mA
IC =-50mA,IB =-5mA
base-emitter saturation voltage
IC =-10mA,IB =-1mA
IC =-50mA, IB =-5mA
- -0.05 μA
60
-
80
-
100 300
60
-
30
-
- -250 mV
- -400 mV
-650 -850 mV
- -950 mV
Cobo
Output capacitance
IE=0, VCB=-5V; f =1MHz
-
4.5 pF
Cobi
Input capacitance
IC=0, VEB=-0.5V; f =1MHz
10 pF
fT
transition frequency
NF
noise figure
td
delay time
tr
rise time
IC=-10mA,VCE=-20V,f=100MHz 250
IC=-0.1mA,VCE=-5V,RS=1.0Kâ¦
-
f=1.0kHz
-
VCC=-3V,VBE(off)=0.5V
IC=-10mA IB1=-IB2=-1mA
-
- MHz
4 dB
35 ns
35 ns
ts
storage time
tf
fall time
VCC=-3V,IC=-10mA
IB1=IB2=-1mA
-
225 ns
-
75 ns
G004
Rev.A
www.gmicroelec.com
3
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