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| UMZ1N Datasheet, PDF (2/3 Pages) Rohm – General purpose transistor (dual transistors) | |||
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Production specification
General purpose transistor
UMZ1N
ELECTRICAL CHARACTERISTICS TR1 Section @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=50μA IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA IB=0
50
V
Emitter-base breakdown voltage
V(BR)EBO IE=50μA IC=0
7
V
Collector cut-off current
ICBO
VCB=60V IE=0
0.1 μA
Emitter cut-off current
IEBO
VEB=7V IC=0
0.1 μA
DC current transfer ratio
hFE
VCE=6V IC=1.0mA
120
560
Collector-emitter saturation voltage VCE(sat)
IC=50mA IB=5mA
0.4 V
Transition frequency
fT
VCE=12V IE=2mA f=100MHz
180
MHz
Output Capacitance
Cob
VCB=12V,f=1.0MHz,IE=0A
2 3.5 pF
ELECTRICAL CHARACTERISTICS TR2 Section @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO
IC=-50μA IE=0
-60
V
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
IC=-1.0mA IB=0
IE=-50μA IC=0
VCB=-60V IE=0
VEB=-6V IC=0
-50
V
-6
V
-0.1 μA
-0.1 μA
DC current transfer ratio
hFE
VCE=-6V IC=-1.0mA
120
560
Collector-emitter saturation voltage VCE(sat)
IC=-50mA IB=-5.0mA
-0.5 V
Transition frequency
fT
VCE=-12V IE=2mA f=100MHz
140
MHz
Output Capacitance
Cob
VCB=-12V,f=1.0MHz,IE=0A
45
pF
Noise Figure
NF
VCE=-5V IC=-200μA f=1.0KHz -
8.0 dB
G030
Rev.A
www.gmicroelec.com
2
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