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| S9015_14 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor | |||
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Production specification
Silicon Epitaxial Planar Transistor
S9015
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-50
V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA,IB=0
-45
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
VCB=-50V,IE=0
VEB=-5V,IC=0
VCE=-5V,IC=-1mA
200
IC=-100mA, IB=- 10mA
IC=-100mA, IB= -10mA
-0.1 μA
-0.1 μA
1000
-0.3 V
-1 V
Transition frequency
VCE=-5V, IC= -10mA
fT
f=30MHz
100
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
L
200-450
H
450-1000
C084
Rev.A
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