 English |
|
|
|
|
|
|
|
| S9013W Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor | |||
| |||
| ◁ |
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
S9013W
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
ICBO
ICEO
IEBO
VCB=40V,IE=0
VCE=20V,IB=0
VEB=5V,IC=0
0.1 μA
0.1 μA
0.1 μA
DC current gain
VCE=1V,IC=50mA
120
400
hFE
VCE=1V,IC=500mA
40
Collector-emitter saturation voltage VCE(sat) IC=500mA, IB= 50mA
Base-emitter saturation voltage
VBE(sat)
IC=500mA, IB= 50mA
Transition frequency
VCE=6V, IC= 20mA
fT
f=30MHz
150
0.6 V
1.2 V
MHz
CLASSIFICATION OF hFE(1)
Rank
L
Range
120-200
H
200-350
J
300-400
Document number: BL/SSSTF011
Rev.A
www.galaxycn.com
2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese