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| S9012 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – TO-92 Plastic-Encapsulate Transistors | |||
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BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
S9012
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=B 0
-25
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-5
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
fT
VCB=-40V,IE=0
VCE=-20V,IB=B 0
VEB=-5V,IC=0
VCE=-1V,IC=-50mA
120
IC=-500mA, IB=B -50mA
IC=-500mA, IB=B -50mA
VCE=-6V, IC= -20mA
f=30MHz
150
-0.1 μA
-0.1 μA
-0.1 μA
400
-0.6 V
-1.2 V
MHz
Collector output capacitance
Cob
VCB=-10V,IE=0,f=1MHz
5
pF
CLASSIFICATION OF hFE(1)
Rank
L
Range
120-200
MARKING
H
200-350
2T1
J
300-400
Document number: BL/SSSTC081
Rev.A
www.galaxycn.com
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