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| S8550 Datasheet, PDF (2/4 Pages) Wing Shing Computer Components – TRANSISTOR (PNP) | |||
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BL Galaxy Electrical
Production specification
Silicon Epitaxial Planar Transistor
S8550
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=B 0
-25
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA,IC=0
-5
V
Collector cut-off current
Collector cut-off current
Emitter cut-off current
ICBO
VCB=-40V,IE=0
ICEO
VCE=-20V,IB=B 0
IEBO
VEB=-3V,IC=0
-0.1 μA
-0.1 μA
-0.1 μA
DC current gain
VCE=-1V,IC=-50mA
120 350
hFE
VCE=-1V,IC=-500mA
50
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
Transition frequency
fT
IC=-500 mA, IB=B -50mA
-0.6 V
IC=-500 mA, IB=B -50mA
-1.2 V
VCE=-6V, IC= -20mA
f=30MHz
150
MHz
CLASSIFICATION OF hFE(1)
Rank
Range
L
120-200
H
200-350
Document number: BL/SSSTC080
Rev.A
www.galaxycn.com
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