RN2Z Datasheet, PDF (2/2 Pages) Galaxy Semi-Conductor Holdings Limited – HIGH EFFICIENCY RECTIFIER

RATINGS AND CHARACTERISTIC CURVES
RN2Z(Z)
FIG.1 -- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
10
N 1.
N 1.
trr
+0.5A
(+)
25VDC
(approx)
(-)
D.U.T.
1
NONIN-
DUCTIVE
OSCILLOSCOPE
(NOTE1)
PULSE
GENERATOR
(NOTE2)
0
-0.25A
-1.0A
1cm
NOTES:1.RISE TIME = 7ns MAX.INPUT IMPEDANCE =1M . 22pF.
JJJJ 2.RISE TIME =10ns MAX.SOURCE IMPEDANCE=50 .
SET TIME BASE FOR 10/20 ns/cm
FIG.2 -- TYPICAL FORWARD CHARACTERISTIC
100
10
1.0
TJ=25
Pulse Width=300µS
0.1
0.04
0.01
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
FIG.3 --FORWARD DERATING CURVE
2.0
1.5
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375"(9.5mm)"Load Length
0.5
0
0
25
50
75
100 125 150
AMBIENT TEMPERATURE,
FIG.4 --TYPICAL JUNCTION CAPACITANCE
200
120
100
50
TJ=25
f=1MHz
20
10
.1 .2 .4
1.0 2 4
10 20 40
100
REVERSE VOLTAGE,VOLTS
FIG.5--PEAK FORWARD SURGE CURRENT
80
70
60
50
40
30
20
10
0
1
TJ=125
8.3ms Single Half
Sine-Wave
2
4
8 10 20 40 60 80 100
NUMBER OF CYCLES AT 60Hz
Document Number 0262012
BL GALAXY ELECTRICAL
www.galaxycn.com
2.