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| PXT8550 Datasheet, PDF (2/4 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(PNP) | |||
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Production specification
PLASTIC-ENCAPSULATE TRANSISTORS
PXT8550
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-100μA, IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO IC=-0.1mA ,IB=0
-25
V
Emitter-base breakdown voltage
V(BR)EBO IE=-100μA, IC=0
-5
V
Collector cut-off current
ICBO
VCB=-40V, IE=0
-0.1 uA
Emitter cut-off current
ICEO
VCE=-20V,IE=0
-0.1 uA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE
VCE(sat)
VEB=-5V,IC=0
VCE=-1V, IC=-100mA
VCE=-1V, IC=-800mA
IC=-800mA ,IB=-80mA
-0.1 uA
85 400
40
-0.5 V
Base-emitter saturation voltage
VBE(sat)
IC=-800mA, IB=-80mA
-1.2 V
Base-emitter volatage
VBE
VCE=-1V,IC=-10mA
-1 V
Base-emitter positive favor voltage
VBEF
IB=-1A
-1.55 V
Transition frequency
fT
VCE=-10V,IC=-50mA,
100
MHz
Output Capacitance
CLASSIFICATION OF hFE(1)
Rank
B
Range
85-160
Cob
VCB=-10V, f=1MHz ,IE=0
C
120-200
D
160-300
15 pF
D3
300-400
E030
Rev.A
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