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| PXT8050 Datasheet, PDF (2/4 Pages) Shenzhen Jin Yu Semiconductor Co., Ltd. – TRANSISTOR(NPN) | |||
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Production specification
PLASTIC-ENCAPSULATE TRANSISTORS PXT8050(NPN)
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA, IE=0
40
V
Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA ,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, IC=0
5
V
Collector cut-off current
ICBO
VCB=40V, IE=0
0.1 uA
Emitter cut-off current
ICEO
VCE=20V,IE=0
0.1 uA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE
VCE(sat)
VEB=5V,IC=0
VCE=1V, IC=100mA
VCE=1V, IC=800mA
IC=800mA ,IB=80mA
0.1 uA
85 400
40
0.5 V
Base-emitter saturation voltage
VBE(sat)
IC=800mA, IB=80mA
1.2 V
Base-emitter volatage
VBE
VCE=1V,IC=10mA
1
V
Base-emitter positive favor voltage
Transition frequency
Output Capacitance
VBEF
fT
Cob
IB=1A
VCE=10V,IC=50mA,
f=30MHz
VCB=10V, f=1MHz ,IE=0
1.55 V
100
MHz
15 pF
CLASSIFICATION OF hFE(1)
Rank
B
Range
85-160
C
120-200
D
160-300
D3
300-400
E030
Rev.A
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