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| PXT3906 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP switching transistor | |||
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Production specification
PNP Switching Transistor
PXT3906
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-10μA IE=0
-40
V
Collector-emitter breakdown voltage V(BR)CEO IC=-1mA IB=0
-40
V
Emitter-base breakdown voltage
V(BR)EBO IE=-10μA IC=0
-6
μV
Collector cut-off current
ICBO
VCB=-30V IE=0
-50 nA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Capacitance
IEBO
hFE
VCE(sat)
VBE(sat)
fT
Cc
VEB=-6V,IC=0
VCE=-1V IC=-100μA
VCE=-1V IC=-1mA
VCE=-1V IC=-10mA
VCE=-1V IC=-50mA
VCE=-1V IC=-100mA
IC=-10mA IB=-1mA
IC=-50mA IB=-5mA
IC=-10mA IB=-1mA
IC=-50mA IB=-5mA
VCE=-20V, IC=-10mA,
f=100MHz
VCB=-5V ,f=1MHz ,IE=0
-50 nA
60 -
80 -
100 300
60 -
30 -
-0.25
V
-0.4
-0.65 -0.85
V
-0.95
250 -
MHz
-
4.5 pF
Emitter Capacitance
Noise Figure
Turn-on Time
Ce
VEB=-0.5V ,f=1MHz IC=0
-
10 pF
F
IC=-100μA,VCE=-5V,
-
4
dB
RS=1kâ¦,f=10Hz to 15.7kHz
Ton
-
65 ns
Delay Time
td
-
35 ns
Rise Time
Turn-on Time
Storage Time
tr
ICon=-10mA,
IBon=-1mA, IBoff=-1mA
toff
ts
-
35 ns
-
300 ns
-
225 ns
Fall Time
tf
-
75 ns
E103
Rev.A
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