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| PXT3904 Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistor | |||
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Production specification
NPN Switching Transistor
PXT3904
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=10μA, IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA ,IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=30V, IE=0
50 nA
Emitter cut-off current
IEBO
VEB=6V,IC=0
50 nA
DC current gain
VCE=1V, IC=0.1mA
VCE=1V, IC=1mA
hFE
VCE=1V, IC=10mA
VCE=1V, IC=50mA
VCE=1V, IC=100mA
60
80
100 300
60
30
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Capacitance
Emitter Capacitance
Noise Figure
VCE(sat)
VBE(sat)
fT
Cc
Ce
F
IC=10mA ,IB=1mA
IC=50mA ,IB=5mA
IC=10mA, IB=1mA
IC=50mA ,IB=5mA
VCE=20V,IC=10mA,
f=100MHz
VCB=5V, f=1MHz ,IE=0
0.2
V
0.3
0.65 0.85
V
0.95
300
MHz
4
pF
VEB=0.5V, f=1MHz ,IC=0
IC=100uA,VCE=5V,RS=1kΩ
F=10Hz to 7.5kHz
8
pF
5
dB
E102
Rev.A
www.gmicroelec.com
2
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