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| PXT2222A Datasheet, PDF (2/4 Pages) NXP Semiconductors – NPN switching transistor | |||
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Production specification
NPN Switching Transistor
PXT2222A
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=10μA, IE=0
75
V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA ,IB=0
40
V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA, IC=0
6
V
Collector cut-off current
ICBO
VCB=60V, IE=0
10 nA
Emitter cut-off current
IEBO
VEB=5V,IC=0
10 nA
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector Capacitance
hFE
VCE(sat)
VBE(sat)
fT
Cc
VCE=10V, IC=0.1mA
VCE=10V, IC=1mA
VCE=10V, IC=10mA
VCE=1V, IC=150mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
IC=150mA ,IB=15mA
IC=500mA ,IB=50mA
IC=150mA, IB=15mA
IC=500mA ,IB=50mA
VCE=10V,IC=20mA,
f=100MHz
VCB=10V, f=1MHz ,IE=0
35
50
75
50
100 300
40
0.3
V
1
0.6 1.2
V
2
300
MHz
8
pF
Emitter Capacitance
Noise Figure
Ce
VEB=10V, f=1MHz ,IC=0
25 pF
F
IC=200uA,VCE=5V,RS=2kΩ
4
dB
F=1kHz,B=200Hz
E099
Rev.A
www.gmicroelec.com
2
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