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| MMDT5401 Datasheet, PDF (2/3 Pages) Diodes Incorporated – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Production specification
Dual PNP Small Signal Surface Mount Transistor MMDT5401
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA IE=0
-160 -
V
Collector-emitter breakdown voltage V(BR)CEO
Emitter-base breakdown voltage
V(BR)EBO
Collector cut-off current
ICBO
Emitter cut-off current
IEBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
IC=-1.0mA IB=0
IE=-10μA IC=0
VCB=-120V IE=0
VCB=-120V IE=0 TA=100â
VEB=-3V IC=0
VCE=-5V IC=-1.0mA
VCE=-5V IC=-10mA
VCE=-5V IC=-50mA
IC=-10mA IB=-1.0mA
IC=-50mA IB=-5.0mA
-150 -
V
-5 -
V
nA
-
-50
μA
-
-50 nA
50 -
60 240 -
50 -
-0.2
-
V
-0.5
Base-emitter saturation voltage
VBE(sat)
IC=-10mA IB=-1.0mA
IC=-50mA IB=-5.0mA
-
-1.0 V
Transition frequency
fT
VCE=-10V IC=-10mA f=100MHz 100 300 MHz
Output Capacitance
Cobo
VCB=-10V,f=1.0MHz,IE=0
-
6
pF
Noise Figure
NF
VCE=-5V IC=-200μA f=1.0KHz -
8.0 dB
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
G009
Rev.A
www.gmicroelec.com
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