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| MMDT3906 Datasheet, PDF (2/4 Pages) Transys Electronics – DUAL PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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BL Galaxy Electrical
Production specification
Dual PNP Small Signal Surface Mount Transistor MMDT3906
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX.
V(BR)CBO Collector-base breakdown voltage IC=-10μA,IE=0
-40
Collector-emitter breakdown
V(BR)CEO
voltage
IC=-1mA,IB=B 0
-40
V(BR)EBO Emitter-base breakdown voltage IE=-10μA,IC=0
-5
ICBO
collector cut-off current
IE = 0,VCB = -30V
- -0.05
IEBO
emitter cut-off current
IC = 0, VEB = -5V
- -0.05
hFE
DC current gain
VCE =-1V,IC= -0.1mA
VCE =-1V,IC =-1mA
VCE =-1V,IC =-10mA
VCE =-1V,IC =-50mA
VCE =-1V,IC =-100mA
60
-
80
-
100 300
60
-
30
-
VCE(sat)
collector-emitter saturation
voltage
IC =-10mA,IBB =-1mA
IC =-50mA,IBB =-5mA
- -250
- -400
VBE(sat)
base-emitter saturation voltage
IC =-10mA,IBB =-1mA
IC =-50mA, IBB =-5mA
-650 -850
- -950
Cob
Output capacitance
IE =0, VCB =-5V; f =1MHz
-
4.5
fT
transition frequency
NF
noise figure
td
delay time
tr
rise time
ts
storage time
tf
fall time
IC=-10mA,VCE=-20V,f=100MHz 250
-
IC=-0.1mA,VCE=-5V
VCC=-3V,VBE(off)=0.5V
IC=-10mA IB1=-IB2=-1mA
-
4
-
35
-
35
VCC=-3V,IC=-10mA
IB1=-IB2=-1mA
-
225
-
75
UNIT
V
V
V
μA
μA
mV
mV
mV
mV
pF
MHz
dB
ns
ns
ns
ns
Document number: BL/SSSTE003
Rev.A
www.galaxycn.com
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