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| MMDT3904_13 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – Dual NPN Small Signal Surface Mount Transistor | |||
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Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT3904
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX.
V(BR)CBO Collector-base breakdown voltage IC=10μA,IE=0
60
V(BR)CEO
V(BR)EBO
ICEX
IBL
hFE
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
collector cut-off current
Base cut-off current
DC current gain
IC=1mA,IB=0
IE=10μA,IC=0
VCE=30V,VEB(OFF)=3.0V
VCE=30V,VEB(OFF)=3.0V
VCE =1V,IC= 0.1mA
VCE =1V,IC =1mA
VCE =1V,IC =10mA
VCE =1V,IC =50mA
VCE =1V,IC =100mA
40
5
-
50
-
50
40
-
70
-
100 300
60
-
30
-
VCE(sat)
VBE(sat)
Cobo
Cibo
collector-emitter saturation voltage
base-emitter saturation voltage
Output capacitance
Input capacitance
IC =10mA,IB =1mA
IC =50mA,IB =5mA
IC =10mA,IB =1mA
IC =50mA, IB =5mA
IE =0, VCB =5V, f =1MHz
IC=0, VEB =0.5V, f =1MHz
-
200
-
300
650 850
-
950
-
4
-
8
fT
transition frequency
IC=10mA,VCE=20V,f=100MHz 300
-
NF
noise figure
IC=0.1mA,VCE =5V,RS=1kâ¦,
-
5
f = 1kHz
td
delay time
tr
rise time
VCC=3V,VBE(off)=-0.5V
IC=10mA IB1=1mA
-
35
-
35
ts
storage time
tf
fall time
VCC=3V,IC=10mA
IB1=IB2=1mA
-
200
-
50
UNIT
V
V
V
nA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
ns
ns
ns
ns
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
E002
Rev.A
www.gmicroelec.com
2
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