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| MMDT2907A_13 Datasheet, PDF (2/5 Pages) Galaxy Semi-Conductor Holdings Limited – Dual PNP Small Signal Surface Mount Transistor | |||
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Production specification
Dual PNP Small Signal Surface Mount Transistor MMDT2907A
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collecter cut-off current
Base cut-off current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IBL
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
Turn-On Time
Delay time
Rise time
Turn-Off Time
Storage time
Fall time
VBE(sat)
fT
Cobo
Cibo
ton
td
tr
Toff
ts
tf
IC=-10μA IE=0
IC=-10mA IB=0
IE=-10μA IC=0
VCB=-50V IE=0
VCB=-50V IE=0 TA=125â
VCE=-30V ,VEB(OFF)=-0.5V
VCE=-30V ,VEB(OFF)=-0.5V
VCE=-10V IC=-100μA
VCE=-10V IC=-1.0mA
VCE=-10V IC=-10mA
VCE=-10V IC=-150mA
VCE=-10V IC=-500mA
IC=-150mA IB=-15mA
IC=-500mA IB=-50mA
IC=-150mA IB=-15mA
IC=-500mA IB=-50mA
VCE=-20V IC=-50mA f=100MHz
VCB=-10V,f=1.0MHz,IE=0
VEB=-2.0V,f=1.0MHz,IC=0
Vcc=-30V,IC=-150mA , IB1= -15mA
VCC=-6V, IC=-150mA
IB1=-IB2=-15mA
-60 -
-60 -
-5 -
- -10
- -50
- -50
75 -
100 -
100 -
100 300
50 -
-0.4
-
-1.6
-1.3
-
-2.6
200 -
-8
- 30
- 45
- 10
- 40
- 100
- 225
- 60
V
V
V
nA
μA
nA
nA
-
V
V
MHz
pF
pF
ns
ns
ns
ns
ns
ns
E006
Rev.A
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