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| MMDT2222A_13 Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – Dual NPN Small Signal Surface Mount Transistor | |||
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Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT2222A
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Base Cut-off Current
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEX
IEBO
IBL
DC current gain
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Output Capacitance
Input Capacitance
Noise Figure
Delay time
Rise time
Storage time
Fall time
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
NF
td
tr
ts
tf
IC=10μA IE=0
IC=10mA IB=0
IE=10μA IC=0
VCB=60V IE=0
VCB=60V IE=0 TA=150â
VCE=60V IEB(off)=3.0V
VEB=3V IC=0
VCE=60V IEB(off)=3.0V
VCE=10V IC=100μA
VCE=10V IC=1.0mA
VCE=10V IC=10mA
VCE=10V IC=150mA
VCE=10V IC=500mA
VCE=10V IC=10mA TA=-55â
VCE=1.0V IC=150mA
IC=150mA IB=15mA
IC=500mA IB=50mA
IC=150mA IB=15mA
IC=500mA IB=50mA
VCE=20V IC=20mA f=100MHz
VCB=10V,f=1.0MHz,IE=0
VEB=0.5V,f=1.0MHz,IC=0
VCE=10V,f=1.0kHz,IC=100μA
RS=1.0kâ¦
Vcc=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA
IB1=-IB2=15mA
75 -
40 -
6-
- 10
- 10
- 10
- 20
35 -
50 -
75 -
100 300
40 -
50 -
35 -
0.3
-
1.0
0.6 1.2
- 2.0
300
-8
- 25
- 4.0
10
25
225
60
UNIT
V
V
V
nA
μA
nA
nA
nA
-
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
E001
Rev.A
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