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MMDT2222A Datasheet, PDF (2/3 Pages) Transys Electronics – DUAL NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR
BL Galaxy Electrical
Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT2222A
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
Collector cut-off current
ICBO
Collector cut-off current
ICEX
Emitter cut-off current
IEBO
Base Cut-off Current
IBL
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Transition frequency
fT
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Cobo
Input Capacitance
Cibo
Noise Figure
NF
SWITCHING CHARACTERISTICS
Delay time
td
Rise time
tr
Storage time
ts
Fall time
tf
IC=10μA IE=0
IC=10mA IB=B 0
IE=10μA IC=0
VCB=60V IE=0
VCB=60V IE=0 TA=150℃
VCE=60V IEB(off)=3.0V
VEB=3V IC=0
VCE=60V IEB(off)=3.0V
VCE=10V IC=100μA
VCE=10V IC=1.0mA
VCE=10V IC=10mA
VCE=10V IC=150mA
VCE=10V IC=500mA
VCE=10V IC=10mA TA=-55℃
VCE=1.0V IC=150mA
IC=150mA IB=B 15mA
IC=500mA IB=B 50mA
IC=150mA IB=B 15mA
IC=500mA IB=B 50mA
VCE=20V IC=20mA f=100MHz
VCB=10V,f=1.0MHz,IE=0
VEB=0.5V,f=1.0MHz,IC=0
VCE=10V,f=1.0kHz,IC=100μA
RS=1.0kΩ
Vcc=30V, VBE(off)=-0.5V
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA
IB1=-IB2=15mA
75 -
40 -
6-
- 10
- 10
- 10
- 20
35 -
50 -
75 -
100 300
40 -
50 -
35 -
0.3
-
1.0
0.6 1.2
- 2.0
300
V
V
V
nA
μA
nA
nA
nA
-
V
V
MHz
-8
pF
- 25 pF
- 4.0 dB
10 ns
25 ns
225 ns
60 ns
Document number: BL/SSSTE001
Rev.A
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