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MMDL770 Datasheet, PDF (2/4 Pages) E-Tech Electronics LTD – Schottky Barrier Diode
Production specification
Schottky Barrier Diode
MMDL770
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Reverse Breakdown Voltage
Forward voltage
Reverse current
Capacitance between
terminals
Symbol
V(BR)R
VF
IR
CT
Min. Typ. Max. Unit Conditions
70
IR=10uA
0.7 1.0 V
IF=10mA
9.0 200 nA VR=35V
0.5 1.0 pF VR=20V,f=1MHz
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
B048
Rev.A
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