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| MMBTA92_13 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – PNP High Voltage Amplifier | |||
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Production specification
PNP High Voltage Amplifier
MMBTA92
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX. UNIT
V(BR)CBO Collector-base breakdown voltage IC=-100μA,IE=0
-300
V(BR)CEO Collector-emitter breakdown voltage IC=-1mA,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-100μA,IC=0
ICBO
collector cut-off current
IE = 0; VCB = -200V
IEBO
emitter cut-off current
hFE
DC current gain
IC = 0; VEB = -3V
VCE = -10V; IC= -1mA
VCE = -10V;IC= -10mA
VCE = -10V;IC= -30mA
-300
-5
- -0.25 μA
-
-0.1 μA
25
40
25
VCE(sat)
collector-emitter saturation voltage IC = -20mA; IB = -2mA
-
-0.5 V
VBE(sat)
base-emitter saturation voltage
IC = -20mA; IB = -2mA
-
-0.9 V
Cob
Collector output capacitance
VCB=-20V,f=1.0MHz
-
fT
transition frequency
IC = -10mA; VCE = -20V;
50
f = 100MHz
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
6.0 pF
- MHz
C077
Rev.A
www.gmicroelec.com
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