MMBTA63 Datasheet, PDF (2/3 Pages) Transys Electronics – PNP SURFACE MOUNT DARLINGTON TRANSISTOR

BL Galaxy Electrical
Production specification
PNP General Purpose Transistor MMBTA63/MMBTA64
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Symbol Parameter
Test conditions
MIN. MAX.
Collector-base breakdown voltage
V_(BR)CBO
MMBTA63 I_C=-100μA,I_E=0
MMBTA64
-30
-
-30
Collector-emitter breakdown voltage
V_(BR)CEO
MMBTA63
MMBTA64
I_C=-0.1mA,I_B=B 0
-30
-
-30
V_(BR)EBO Emitter-base breakdown voltage
I_E=-100μA,I_C=0
-10
-
I_CBO
collector cut-off current
I_E = 0; V_CB = -30V
-
-0.1
I_CEO
collector cut-off current
I_E = 0; V_CE = -10V
-
-0.1
DC current gain
MMBTA63 V_CE = -5V; I_C= -10mA
5000
h_FE
MMBTA64 V_CE = -5V;I_C = -10mA
10000
-
MMBTA63 V_CE = -5V;I_C = -100mA 10000
MMBTA64 V_CE = -5V;I_C =-100mA 20000
V_CE(sat)
collector-emitter saturation voltage I_C = -100mA; I_BB =-0.1mA -
-1.5
f_T
transition frequency
I_C =-10mA; V_CE =-5.0V;
125
-
f =100MHz
UNIT
V
V
V
μA
μA
V
MHz
PACKAGE OUTLINE
Plastic surface mounted package
A
E
K
B
D
G
J
H
C
SOT-23
SOT-23
Dim
Min
Max
A
2.85
2.95
B
1.25
1.35
C
1.0Typical
D
0.37
0.43
E
0.35
0.48
G
1.85
1.95
H
0.02
0.1
J
0.1Typical
K
2.35
2.45
All Dimensions in mm
Document number: BL/SSSTC124
Rev.A
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