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| MMBT5550_13 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN General Purpose Amplifier | |||
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Production specification
NPN General Purpose Amplifier
MMBT5550
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA IE=0
160
V
Collector-emitter breakdown voltage V(BR)CEO IC=1.0mA IB=0
140
V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA IC=0
6
V
Collector cut-off current
ICBO
VCB=100V IE=0
100 nA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
IEBO
hFE
VCE(sat)
VBE(sat)
VEB=4V IC=0
VCE=5.0V IC=1.0mA
VCE=5.0V IC=10mA
VCE=5.0V IC=50mA
IC=10mA IB=1.0mA
IC=50mA IB=5.0mA
IC=10mA IB=1.0mA
IC=50mA IB=5.0mA
50 nA
60
60
250
20
0.15
V
0.25
1.0
V
1.2
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
C117
Rev.A
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