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| MMBT3904T Datasheet, PDF (2/4 Pages) Diodes Incorporated – NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR | |||
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Production specification
NPN SWITCHING TRANSISTOR
MMBT3904T
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. MAX. UNIT
V(BR)CBO
V(BR)CEO
V(BR)BEO
ICBO
IEBO
ICEX
IBL
hFE
VCEï¼satï¼
VBEï¼satï¼
Cobo
Cibo
fT
NF
td
tr
ts
tf
Collector-base breakown voltage IC=10μA,IE=0
60
Collector- emitter breakown voltage IC=1.0mA,IB=0
40
Emitter-base breakown voltage
IE=10μA,IC=0
6
Collector cut-off current
IE=0,VCB=30V
Emitter cut-off current
IC=0,VEB=5V
collector cut-off current
VCE=30V,VEB(OFF)=3.0V
Base cut-off current
VCE=30V, VEB(OFF)=3.0V
DC current gain
VCE=1V,IC=0.1mA
40
VCE=1V,IC=1mA
70
VCE=1V,IC=10mA
100
VCE=1V,IC=50mA
60
VCE=1V,IC=100mA
30
collector-emitter saturation voltage
IC=10mA; IB=1mA
IC=50mA; IB=5mA
IC=10mA; IB=1mA
650
base-emitter saturation voltage
IC=50mA; IB=5mA
Output capacitance
IE=0,VCB=5V,f=1MHz
Input capacitance
IC=0,VBE=0.5V,f =1MHz
transition frequency
noise figure
delay time
rise time
IC=10mA,VCE =20V,f=100MHz 300
IC=100μA,VCE =5V,
RS =1kâ¦;f =1.0MHz
IC=10mA,IB1=1mA,VBE(off)=-0.5V
-
VCC=3.0V
-
storage time
VCC=3.0V, IC=10mA
-
fall time
IB1=IB2=1mA
-
50 nA
50 nA
50 nA
50 nA
300
200 mV
300 mV
850 mV
950 mV
4 pF
8 pF
MHz
5 dB
35 ns
35 ns
200 ns
50 ns
H014
Rev.A
www.gmicroelec.com
2
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