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| MMBT2369_13 Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – NPN General Purpose Amplifier | |||
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Production specification
NPN General Purpose Amplifier
MMBT2369
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0
40
V
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
V(BR)CEO
V(BR)EBO
ICBO
DC current gain
hFE
Collector-emitter saturation voltage VCE(sat)
IC=10mA IB=0
IE=10μA IC=0
VCB=20V IE=0
VCE=1.0V IC=10mA
VCE=2.0V IC=100mA
IC=10mA IB=1.0mA
15
V
4.5
V
0.4 μA
40 120
20
0.25 V
Output capacitance
Small signal current gain
Storage Time
Cobo
hfe
ts
VCE=5.0V,IE=0,f=1.0MHz
4.0 pF
IC=10mA,VCE=10V,
5.0
f=100MHz
IB1=IB2=IC=10mA
13 ns
Turn-on time
Turn-off time
ton
VCC=3V, IC=10mA, IB1=3mA
12 ns
toff
VCC=3V, IC=10mA, IB1=3mA
IB2=1.5mA
18 ns
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
C114
Rev.A
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