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| MMBT2369A_13 Datasheet, PDF (2/3 Pages) Galaxy Semi-Conductor Holdings Limited – NPN General Purpose Amplifier | |||
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Production specification
NPN General Purpose Amplifier
MMBT2369A
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0
40
V
Collector-emitter breakdown
voltage
V(BR)CEO IC=10mA IB=0
15
V
Emitter-base breakdown voltage
Collector cut-off current
Collector cut-off current
DC current gain
Collector-emitter saturation
voltage
Base-emitter saturation voltage
Output capacitance
Storage time
Turn-on time
Turn-off time
V(BR)EBO
ICBO
ICES
hFE
VCE(sat)
VBE(sat)
Cobo
tS
ton
toff
IE=10μA IC=0
VCB=20V IE=0
VCE=20V,VBE=0
VCE=1.0V IC=10mA
VCE=0.35V IC=10mA
VCE=0.4V IC=30mA
VCE=1.0V IC=100mA
IC=10mA IB=1.0mA
IC=30mA IB=3.0mA
IC=100mA IB=10mA
IC=10mA IB=1.0mA
IC=30mA IB=3.0mA
IC=100mA IB=10mA
VCB=5V,IE=0.f=1.0MHz
IB1=IB2=IC=10mA
VCC=3V,IC=10mA,
IB1=3mA
VCC=3V,IC=10mA,
IB1=3mA,IB2=1.5mA
4.5
40
30
20
0.7
5.0
8.0
10
V
0.4 μA
0.4 μA
120
0.2
0.25 V
0.5
0.85
1.15 V
1.6
4.0 pF
13 ns
12 ns
18 ns
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
C115
Rev.A
www.gmicroelec.com
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