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| MMBT2222_13 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN General Purpose Amplifier | |||
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Production specification
NPN General Purpose Amplifier
MMBT2222
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=10μA IE=0
60
V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA IB=0
30
Emitter-base breakdown voltage
V(BR)EBO IE=10μA IC=0
5
Collector cut-off current
ICBO
VCB=50V IE=0
Emitter cut-off current
IEBO
VEB=3V IC=0
VCE=10V IC=150mA
100
DC current gain
VCE=10V IC=0.1mA
35
hFE
VCE=10V IC=1.0mA
50
VCE=10V IC=10mA
75
VCE=10V IC=500mA
30
VCE=1V IC=150mA
50
Collector-emitter saturation voltage VCE(sat)
IC=500mA IB=50mA
IC=150mA IB=15mA
Base-emitter saturation voltage
VBE(sat)
IC=500mA IB=50mA
IC=150mA IB=15mA
Transition frequency
fT
VCE=20V IC=20mA
250
f=100MHz
V
V
10 μA
0.01 μA
300
1.6
V
0.4
2.6
V
1.3
MHz
Output capacitance
Input capacitance
Delay time
Rise time
Storage time
Fall time
Cobo
Cibo
td
tr
ts
tf
VCB=10V,IE=0,f=1MHz
VEB=0.5V,IC=0, f=1MHz
Vcc=30V, VBE(off)=0.5V
IC=150mA , IB1= 15mA
VCC=30V, IC=150mA
IB1=IB2=15mA
8.0 pF
30 pF
10 ns
25 ns
225 ns
60 ns
C091
Rev.A
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