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| MMBT1616A_14 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor | |||
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Production specification
NPN Silicon Epitaxial Planar Transistor
MMBT1616A
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA IE=0
120
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA IC=0
6
V
Collector cut-off current
ICBO
VCB=60V IE=0
0.1 μA
Collector cut-off current
IEBO
VCE=6V IC=0
0.1 μA
DC current gain
VCE=2V IC=100mA
135
400
hFE
VCE=2V IC=1A
81
Collector-emitter saturation voltage VCE(sat) IC=1A IB=50mA
0.3 V
Base-emitter saturation voltage
VBE(sat)
IC=1A IB=50mA
1.2 V
Transition frequency
Output capacitance
Delay time
Rise time
Storage time
fT
VCE=2V IC=100mA
100
MHz
Cob
VCB=10V,IE=0,f=1.0MHz
ton
VCE=10V, IC=100mA
Tf
VBE(off)=2-3V
ts
IB1=IB2=10mA
19 pF
0.07
us
0.07
us
0.95
us
C070
Rev.A
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