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| MMBT1616A Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – NPN Silicon Epitaxial Planar Transistor | |||
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BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
MMBT1616A
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
120
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=B 0
60
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
6
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1 μA
Emitter cut-off current
IEBO
VEB=6V,IC=0
DC current gain
VCE=2V,IC=100mA
135
hFE
VCE=2V, IC=1A
81
Collector-emitter saturation voltage VCE(sat)
IC=1A, IB=B 50mA
0.1 μA
400
0.3 V
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Turn on time
Fall time
Storage time
VBE(sat)
fT
Cob
ton
tf
ts
IC=1A, IB=B 50mA
VCE=2V, IC= 100mA
VCB=10V,IE=0,f=1MHz
VCE=10V,IC=100mA
VBE(off)=2-3V
IB1=IB2=10mA
1.2 V
100
MHz
19 pF
0.07
μS
0.07
μS
0.95
μS
Document number: BL/SSSTC070
Rev.A
www.galaxycn.com
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