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| MMBD914_13 Datasheet, PDF (2/4 Pages) Galaxy Semi-Conductor Holdings Limited – High-speed switching diode | |||
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Production specification
High-speed switching diode
MMBD914
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Characteristic
Reverse Breakdown Voltage
Forward Voltage
Reverse Current
Reverse Recovery Time
Diode Capacitance
Symbol Min
V(BR)R
75
VF1
VF2
VF3
VF4
IR
trr
CD
MAX UNIT Test Condition
V
715
855
1000 mV
1250
1.0 uA
50 uA
30 uA
25 nA
4
nS
IR=100μA
IF=1mA
IF=10mA
IF=50mA
IF=150mA
VR=75V
VR=75V,Tj=150â
VR=25V,Tj=150â
VR=20V
IF=IR=10mA,Irr=0.1*IR, RL=100â¦
2.0 pF VR=0V,f=1MHz
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
C059
Rev.A
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