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| FMMT491_14 Datasheet, PDF (2/5 Pages) Galaxy Semi-Conductor Holdings Limited – Silicon Epitaxial Planar Transistor | |||
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Production specification
NPN Silicon Epitaxial Planar Transistor
FMMT491
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
80
V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0
60
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=60V,IE=0
0.1 μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1 μA
VCE=5V,IC=1mA
100
DC current gain
VCE=5V,IC=500mA
100
300
hFE
VCE=5V,IC=1A
80
VCE=5V,IC=2A
30
Collector-emitter saturation voltage VCE(sat)
IC=500mA, IB= 50mA
IC=1A, IB= 100mA
Base-emitter saturation voltage
VBE(sat)
IC=1A, IB= 100mA
Base-emitter voltage
Transition frequency
Collector output capacitance
VBE(on)
IC=1A,VCE=5V
fT
VCE=10V, IC= 50mA
150
f=100MHz
Cob
VCB=10V,f=1MHz
0.25
V
0.5
1.1 V
1.0 V
MHz
10 pF
C052
Rev.A
www.gmicroelec.com
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