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| FMMT458 Datasheet, PDF (2/4 Pages) Zetex Semiconductors – NPN SILICON PLANAR HIGH VOLTAGE TRANSISTOR | |||
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Production specification
NPN Silicon Epitaxial Planar Transistor
FMMT458
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=100μA,IE=0
400
V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=0
400
V
Emitter-base breakdown voltage
V(BR)EBO IE=100μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=320V,IE=0
0.1 μA
Collector cut-off current
ICEO
VCE=320V,IB=0
0.1 μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.1 μA
VCE=10V,IC=1mA
100
DC current gain
hFE
VCE=10V,IC=50mA
100
300
Collector-emitter saturation voltage VCE(sat)
Base-emitter saturation voltage
VBE(sat)
Base-emitter turn on voltage
VBE(on)
Transition frequency
fT
Collector output capacitance
Cob
Switching times
ton
toff
VCE=10V,IC=100mA
IC=20mA, IB= 2mA
IC=50mA, IB= 6mA
IC=50mA, IB=5mA
IC=50mA,VCE=10V
VCE=20V, IC= 10mA
f=20MHz
VCB=20V,f=1MHz
IC=50mA,VCC=100V
IB1=5mA,IB2=10mA
15
0.2
V
0.5
0.9 V
0.9 V
50
MHz
5
pF
135
nS
2260
C189
Rev.A
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