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| FMMT449 Datasheet, PDF (2/4 Pages) Zetex Semiconductors – NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |||
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BL Galaxy Electrical
Production specification
NPN Silicon Planar Medium Power Transistor
FMMT449
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=1mA,IE=0
50
V
Collector-emitter breakdown voltage V(BR)CEO IC=10mA,IB=B 0
30
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
V(BR)EBO
ICBO
IEBO
IE=-100μA,IC=0
5
VCB=40V,IE=0
VCB=40V,IE=0Tamb=100â
VEB=4V,IC=0
V
0.1
μA
10
0.1 μA
VCE=2V,IC=50mA
70
DC current gain
VCE=2V,IC=500mA
100
300
hFE
VCE=2V,IC=1A
80
VCE=2V,IC=2A
40
Collector-emitter saturation voltage
Base-emitter saturation voltage
VCE(sat)
VBE(sat)
IC=1A, IB=B 100mA
IC=2A, IB=B 200mA
IC=1A, IB=B 100mA
Base-emitter turn-on voltage
VBE(on)
IC=1A,VCE=2V
Transition frequency
fT
VCE=10V, IC= 50mA
150
f=100MHz
0.5
V
1.0
1.25 V
1.0 V
MHz
Output capacitance
Cobo
VCB=10V,f=1MHz
15 pF
Document number: BL/SSSTC051
Rev.A
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