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| FMMT4124 Datasheet, PDF (2/4 Pages) Jiangsu Changjiang Electronics Technology Co., Ltd – TRANSISTOR（ NPN ） | |||
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Production specification
NPN Silicon Epitaxial Planar Transistor
FMMT4124
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN TYP MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=10μA,IE=0
30
V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0
25
V
Emitter-base breakdown voltage
V(BR)EBO IE=10μA,IC=0
5
V
Collector cut-off current
ICBO
VCB=20V,IE=0
50 nA
Emitter cut-off current
IEBO
VEB=3V,IC=0
50 nA
DC current gain
VCE=1V,IC=2mA
120
360
hFE
VCE=1V,IC=50mA
60
Collector-emitter saturation voltage VCE(sat) IC=50mA, IB= 5mA
0.3 V
Base-emitter saturation voltage
Transition frequency
Output capacitance
Input capacitance
Noise figure
Small Signal Current Transfer
Delay Time
Rise Time
Storage Time
Fall Time
VBE(sat)
fT
Cobo
Cibo
N
hfe
td
tr
ts
tf
IC=50mA, IB= 5mA
0.95 V
VCE=20V, IC= 10mA
300
f=100MHz
MHz
VCB=5V,IE=0 f=140MHz
4
pF
VBE=0.5V,IE=0
f=140MHz
IC=200μA,
VCE=5V,Rg=2kâ¦
8
pF
6
dB
IC=2mA,VCE=1V,f=1KHz 120 480
VCC=3V,VBE(off)=0.5v
IC=10mA,IB1=1mA
24
ns
13
ns
VCC=3V,
IC=10mA,IB1= IB2=1mA
125
ns
11
ns
C232
Rev.A
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