ERA34-10 Datasheet, PDF (2/2 Pages) EIC discrete Semiconductors – FAST RECOVERY DIODE

RATINGS AND CHARACTERISTIC CURVES
ERA34-10
FIG.1 -- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM
50
10
N.1.
N.1.
trr
+0.5A
(+)
50VDC
(APPROX)
(-)
D.U.T.
1
N.1.
OSCILLOSCOPE
(NOTE 1)
(-)
PULSE
GENERATOR
(NOTE2)
(+)
NOTES:1.RISETIME=7ns MAX. INPUTIMPEDANCE=1M .22pF
2.RISETIME=10ns MAX. SOURCEIMPEDANCE=5O
FIG.2 --FORWARD DERATING CURVE
0
-0.25A
-1.0A
1cm
SETTIMEBASEFOR50/100ns /cm
FIG.3---TYPICAL JUNCTION CAPACITANCE
0 .1 4
0 .1 2
0 .1 0
0 .0 8
0 .0 6
0 .0 4
0 .0 2
0
0
20 40
S ingle P hase
Half W ave 60Hz
R esistive or
Inductive Load
60 80 100 120 140 150
10
16
14
12
10
4
TJ=25
f=1MHz
2
1
.1 .2 .4
1.0 2 4
10 20 40
100
AMBIENT TEMPERATURE,
FIG.4--PEAK FORWARD SURGE CURREN
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
FIG.5---TYPICAL FORWARD CHARACTERISTIC
16
14
12
10
8
6
4
2
0
1
TJ=125
8.3ms Single Half
Sine-Wave
2
4
8 1 0 20
40 60 80 100
1
TJ=25
Pulse Width=300µS
0.1
0.01
0.001
0 _{0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2}
NUMBER OF CYCLES AT 60 Hz
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
Document Number 0261054
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2.