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| BC868 Datasheet, PDF (2/3 Pages) NXP Semiconductors – NPN medium power transistor | |||
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Production specification
NPN medium power Transistor
BC868
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector cut-off current
VCB=25V IE=0
ICBO
VCB=25V IE=0,TA=150â
100 nA
10 μA
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
IEBO
hFE
VCE(sat)
VCE=5V IC=0
VCE=10V IC=5mA
VCE=1V IC=500mA
VCE=1V IC=1A
IC=1A IB=100mA
100 nA
50
85 375
60
0.5 V
Base-emitter voltage
Transition frequency
CLASSIFICATION HFE
Range
85-375
VBE
IC=1A ,VCE=1V
fT
VCE=5V, IC=10mA,
f=100MHz
40
85-160
100-250
Marking
CAC
CBC
CCC
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
1V
MHz
160-375
CDC
E066
Rev.A
www.gmicroelec.com
2
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