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BC808 Datasheet, PDF (2/3 Pages) AUK corp – PNP Silicon Transistor (High current application Switching application)
BL Ga
Production specification
PNP General Purpose Amplifier
BC808-16/-25/-40
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol Test conditions
MIN MAX UNIT
Collector-base breakdown voltage
V(BR)CBO IC=-10μA IE=0
-30
V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA IB=0
-25
V
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
808-16
808-25
808-40
808-16
808-25
808-40
V(BR)EBO
ICBO
IEBO
hFE
hFE
IE=-10μA IC=0
VCB=-25V IE=0
VCE=-4V IC=0
VCE=-1V IC=-100mA
VCE=-1V IC=-300mA
-5
V
-0.1 μA
-0.1 μA
100 250
160 400
250 630
60
100
170
Collector-emitter saturation voltage VCE(sat) IC=-500mA IB=-50mA
-0.7 V
Base-emitter saturation voltage
VBE(sat)
IC=-500mA IB=-50mA
-1.2
Output capacitance
Transition frequency
Cobo
VCB=-10V,f=1.0MHz
10
fT
VCE=-5V,IC=-50mA
f=100MHz
200
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
V
pF
MHz
C180
Rev.A
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