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| BAV99W Datasheet, PDF (2/3 Pages) NXP Semiconductors – High-speed double diode | |||
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BL Galaxy Electrical
Production specification
Dual series switching diode
BAV99W
ELECTRICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
Parameter
Reverse voltage leakage current
Forward voltage
Symbol
Test conditions MIN
IR
VR=75V
VR=20V
IF=1mA
VF
IF=10mA
IF=50mA
IF=150mA
Junction capacitance
Cj
VR=0V f=1MHz
Reverse recovery time
IF=IR=10mA
trrç¶
VR=5V
RC=100â¦
TYPICAL CHARACTERISTICS @ Ta=25â unless otherwise specified
MAX UNIT
2.5
A
25
nA
715
855
mV
1000
1250
2.0
pF
4
nS
Document number: BL/SSSDF007
Rev.A
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